Samsung has announced its 1 TB eUFS 2.1 Storage
On 30th January 2019, Samsung has announced its 1 TB embedded Universal Flash Storage (eUFS). Samsung is one of the best chip manufactures and invest billions of dollars in chip manufacturing and research and development department. There may be a chances that Samsung can used its 1 TB eUFS 2.1 storage in its upcoming flagship smartphones such as Samsung Galaxy S10 and Samsung Galaxy Note 10.
👉History of Samsung Universal Flash Storage (UFS) Manufacturing:
Samsung was one of the first manufacturers to launch a smartphone with 512 GB of storage, when it unveiled the Samsung Galaxy Note 9 in August 2018. At that time, the company also touted the ability to add 512 GB microSD card for a total of 1 TB of storage. The company is promising to increase its manufacturing capacity throughout the first half of this year to support customers who want to put these chips into their next generation flagship phones.
👉Recently:
Just in time for the launch of the Samsung Galaxy S10 and potential unveiling of premium foldable Galaxy F smartphone, Samsung has announced that it has begun mass producing of embedded Universal Flash Storage (eUFS) chips with a capacity of 1 TB. This will allow for a huge increase in the storage capacities of smartphones and other compact devices, without the need for removable memory cards. This is twice the density of Samsung's previous top-end 512 GB eUFS solutions. The company expects strong demand and will sell its chips to other smartphone manufacturers in addition to using them in its own flagship products.
👉Features of 1 TB embedded Universal Flash Storage (eUFS):
These new chips measure the same 11.5 mm x 13 mm as the previous generation, allowing them to fit into smartphones where every last bit of space is valuable. The leap in capacity is possible thanks to Samsung's ability to stack 16 of its 5th Generation V-NAND dies, Each die has 96 layers of 3D stacked flash memory cells. The company also touts a new in-house controller.
The 1 TB chip uses the eUFS 2.1 standard and promises sequential read speeds of up to 1000 MBps, which is just under twice as much as typical SATA SSDs used for notebook and desktop PCs. The sequential write speed is rated at 260 MBps. Random read and write speeds are claimed to be up to 58,000 IOPS (Input/Output operations Per seconds) and 50,000 IOPS respectively, which the company says is 500X faster than what today's high-performance microSD cards can manage.
These are all improvements over the company's own 512 GB capacity eUFS, introduced in November 2017. Samsung points out that high-speed storage is essential when writing huge amounts of data continuously such as when recording video at 960 fps or with multiple cameras simultaneously.
These are all improvements over the company's own 512 GB capacity eUFS, introduced in November 2017. Samsung points out that high-speed storage is essential when writing huge amounts of data continuously such as when recording video at 960 fps or with multiple cameras simultaneously.
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